IRF620B |
RFQ for IRF620B Required Field |
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| Technical/Catalog Information | IRF620B_FP001 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 5A |
| Rds On (Max) @ Id, Vgs | 800 mOhm @ 2.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 390pF @ 25V |
| Power - Max | 47W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 16nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF620B_FP001 IRF620B_FP001 |
| Product | Manufacturers | Pack | D/C |
| IRF620B | - | - | 2005 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Features |
| • 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 10 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability |
| Symbol | Parameter | IRF620B | IRFS620B | Units | |
| VDSS | Drain-Source Voltage | 200 | V | ||
| ID | Drain Current | - Continuous (TC = 25°C) | 5.0 | 5.0 * | A |
| - Continuous (TC = 100°C) | 3.2 | 3.2* | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 18 | 18* | A | |
| VGSS | Gate-Source Voltage | ± 30 | V | ||
| EAS | Single Pulsed Avalanche Energy (Note 2) | 65 | mJ | ||
| IAR | Avalanche Current (Note 1) | 5.0 | A | ||
| EAR | Repetitive Avalanche Energy (Note 1) | 4.7 | mJ | ||
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns | ||
| PD | Power Dissipation (TC = 25°C) | 47 | 32 | W | |
| - Derate above 25°C | 0.38 | 0.25 | W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | °C | ||
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C | ||
